Numerical Solution of Hydrodynamic Semiconductor Device Equations Employing a Stabilized Adaptive Computational Technique

In this paper, we generalize our proposed earlier computing method [10-11] to solve hydrodynamic semiconductor device equations. For submicron MOSFET devices, we simulate their temperature distribution by solving carrier energy balance equation with adaptive computational technique. This robust method based on: (1) the finite volume (FV) discertization scheme; (2) the monotone iterative (MI) algorithm; (3) a posteriori error estimation; and (4) the 1-irregular mesh refinement; is successfully developed and implemented. Numerical results not only have a good agreement with physical phenomena but also demonstrate that our methodology has good computational efficiency. Convergence property for arbitrary initial guesses for the beginning of simulation is also reported to show the robustness of the method. Key-Words: Hydrodynamic Equations, Semiconductor Device Simulation, MOSFET, Adaptive Computation, Error estimation, Monotone Iterative Technique, Carrier Temperature